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• W2397752667 endingPage "1944" @default.
• W2397752667 startingPage "1937" @default.
• W2397752667 abstract "ABSTRACT This paper introduces a matching technique for highly sensitive integrated broadband low‐noise amplifiers. Noise matching is achieved by the paralleling of identical input transistors. Impedance matching, based on reducing the number of components to the absolute minimum, is done by using the base‐collector capacitance as network element. Using a 0.13 m silicon‐germanium (SiGe) bipolar complementary metal oxide semiconductor process, simulation results indicate a maximum noise figure of 0.462 dB at room temperature and a return loss better than 10 dB from 300 MHz to 1.4 GHz. The technique demonstrates that SiGe heterojunction bipolar transistors can be used for cost‐effective applications in radio astronomy. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1937–1945, 2016" @default.
• W2397752667 created "2016-06-24" @default.
• W2397752667 creator A5018902896 @default.
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• W2397752667 date "2016-05-27" @default.
• W2397752667 modified "2023-10-05" @default.
• W2397752667 title "Increasing the bandwidth of a SiGe HBTLNA with minimum impact on noise figure" @default.
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• W2397752667 doi "https://doi.org/10.1002/mop.29945" @default.
• W2397752667 hasPublicationYear "2016" @default.
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