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- W2398046089 abstract "Intensive attention has been currently focused on the discovery of semiconductor and proficient cocatalysts for eventual applications to the photoelectrochemical water splitting system. A W-Mo-doped BiVO 4 semiconductor was prepared by the surfactant-assisted thermal decomposition method on a fluorine-doped tin oxide conductive film. The W-Mo-doped BiVO 4 films showed a porous morphology with the grain sizes of about 270 nm. Because the hole diffusion length of BiVO 4 is about 100 nm, the W-Mo-doped BiVO 4 film in this study is an ideal candidate for the photoelectrochemical water oxidation. Iron oxyhydroxide (FeOOH) electrocatalyst was chemically deposited on the W-Mo-doped BiVO 4 to investigate the effect of the electrocatalyst on the semiconductor. The W-Mo-doped BiVO 4 /FeOOH composite electrode showed enhanced activity compared to the pristine W-Mo-doped BiVO 4 electrode for water oxidation reaction. The chemical deposition is a promising method for the deposition of FeOOH on semiconductor." @default.
- W2398046089 created "2016-06-24" @default.
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- W2398046089 date "2016-01-01" @default.
- W2398046089 modified "2023-10-17" @default.
- W2398046089 title "Efficient Photoelectrochemical Water Oxidation by Metal-Doped Bismuth Vanadate Photoanode with Iron Oxyhydroxide Electrocatalyst" @default.
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- W2398046089 doi "https://doi.org/10.1155/2016/1827151" @default.
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