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- W239876211 abstract "With continuous scaling of device dimensions in advanced technology nodes, ultra-shallow and low-resistivity junctions are needed to suppress short-channel effects and improve device performance. Controlling across-wafer anneal temperature uniformity and minimizing pattern density effects are critical in enabling these Ultra-Shallow Junctions (USJ) for the 45nm node and beyond. One promising method is picosecond Laser Spike Anneal (LSA) 2, 3, . This process enables highly localized elevated temperatures for rapid annealing of implant layers without impacting the process thermal budget. However, slip line defects and other surface damage are often induced by rapid heating of the substrate during the LSA process. Consequently, understanding and characterizing the surface condition of post-anneal wafers are critical in order to develop a robust LSA process. Traditional defect detection techniques either cannot detect slip line defects efficiently (brightfield/ darkfield patterned wafer inspectors) or provide information from only a small portion of the wafer (optical microscopes), as seen in Figure 1. A similar situation exists with regard to understanding post-anneal wafer surface morphology. Atomic Force Microscopy (AFM) can provide accurate and quantitative surface information, but its speed is unsuitable for full-wafer characterization and production monitoring." @default.
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- W239876211 date "2008-01-01" @default.
- W239876211 modified "2023-09-27" @default.
- W239876211 title "A Novel Method of Characterizing Post-laser Anneal Surface Conditions for the 45nm Process Technology Node" @default.
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