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- W2399002186 abstract "In this paper we present results on the growth of low-doped thick epitaxial layers on 4° off-oriented 4H-SiC using a warm-wall multi-wafer CVD system (Aixtron VP2800WW). Statistical data on doping and thickness of 25 μm to 40 μm layer growth show results similar to standard epilayer growth (5-15 μm). Improvements in thickness and doping uniformity as well as the reduction of epitaxial defects has boosted the quality of 25 μm to 40 μm thick epilayers. Laser light scattering measurements resulted in projected device yields with median values of 83% and 96% for 5×5 mm 2 and 2×2 mm 2 die size, respectively. This corresponds to a low epitaxial defect density of < 0.75 cm -2 in 25-40 μm thick epilayers. This paper also presents results of 60 μm to 150 μm thick epitaxial layer growth. Excellent results for doping, thickness and carrier lifetime were achieved. As an example results of a fully loaded 10×100mm run with 150 μm thick epilayers are presented. Wafer-to-wafer doping and thickness values of 3.7 % and 3.4% for sigma/mean were accomplished, respectively. Typical average lifetime values of 5 μs to 6 μs were measured on the 150 μm thick layers without post-epi treatments." @default.
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- W2399002186 date "2016-05-01" @default.
- W2399002186 modified "2023-09-22" @default.
- W2399002186 title "Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor" @default.
- W2399002186 doi "https://doi.org/10.4028/www.scientific.net/msf.858.129" @default.
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