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- W2399667040 abstract "4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts were demonstrated and were characterized at up to a temperature of 200 °C. For the pMOSFETs, silicides on p-type 4H-SiC with Nb/Ni, NbNi alloy, Ni and Nb/Ti were investigated, and the Nb/Ni silicide with the contact resistance of 5.04×10 -3 Ωcm 2 were applied for the pMOSFETs." @default.
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- W2399667040 date "2018-06-01" @default.
- W2399667040 modified "2023-10-03" @default.
- W2399667040 title "4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts" @default.
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- W2399667040 doi "https://doi.org/10.4028/www.scientific.net/msf.924.423" @default.
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