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- W2400121645 abstract "Because the conditions under which semi-insulating 4H-SiC crystals can grow are so specific, other polytypes such as 15R and 6H can easily emerge during the growth process. In this work, a polytype stabilization technology was developed by altering the following parameters: growth temperature, temperature field distribution, and C/Si ratio. In the growth process of high-purity semi-insulating 4H-SiC crystals, the generation of undesirable polytypes was prevented, and a crystal 100 % 4H-SiC polytype was obtained. A high C/Si ratio in powder source was shown to be advantageous for the stabilization of the 4H polytype. Several methods were applied to evaluate the quality of crystals precisely; these methods include Raman mapping, X-ray diffraction, and resistivity mapping. Results showed that the 3inch-wafer was entirely made of 4H polytype, the mean value of FWHM was approximately 40 arcsec, and the distribution of the resistivity value was between 106 Ω×cm and 107 Ω×cm.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12914" @default.
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- W2400121645 date "2016-05-19" @default.
- W2400121645 modified "2023-10-16" @default.
- W2400121645 title "Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method" @default.
- W2400121645 doi "https://doi.org/10.5755/j01.ms.22.2.12914" @default.
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