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• W2400549007 abstract "The TiN thin films were deposited by ALE(atomic layer epitaxy) on (100) silicon substrate. The TiN thin films were characterized by means of XRD, 4-point probe, AFM, AES and SEM. TEMAT(terakis(ethyl methy lamino)titanium) and were injected into the reactor in sequence of TEMAT- to ensure a saturated surface reaction. As a result, the depostion rate of the TiN film was controlled by self-limiting growth mechanism at temperature range form 150 to 220 . Deposited TiN films, all of which show amorphous structure, had a fixed deposition rate of 4.5 /cycle. The resistivity of 210 ~ 230 cm and the surface r.m.s. roughness of 7.9 ~ 9.3 were measured. When TiN film of 2000 were deposited, a excellent step coverage were observed in a trench structure of 0.43 contacts with 6:1 aspect ratio." @default.
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• W2400549007 date "2000-01-01" @default.
• W2400549007 modified "2023-10-16" @default.
• W2400549007 title "Deposition and Characteristics of TiN Thin Films by Atomic Layer Epitaxy" @default.
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