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• W2400694414 endingPage "06JB01" @default.
• W2400694414 startingPage "06JB01" @default.
• W2400694414 abstract "Abstract Benzotriazole (BTA) has been used to protect copper (Cu) from corrosion during Cu chemical mechanical planarization (CMP) processes. However, an undesirable Cu–BTA complex is deposited after Cu CMP processes and it should be completely removed at post-Cu CMP cleaning for next fabrication process. Therefore, it is very important to understand of Cu–BTA complex formation behavior for its applications such as Cu CMP and post-Cu CMP cleaning. The present study investigated the effect of pH and polisher conditions on the formation of Cu–BTA complex layers using electrochemical techniques (potentiodynamic polarization and electrochemical impedance spectroscopy) and the surface contact angle. The wettability was not a significant factor for the polishing interface, as no difference in the contact angles was observed for these processes. Both electrochemical techniques revealed that BTA had a unique advantage of long-term protection for Cu corrosion in an acidic condition (pH 3)." @default.
• W2400694414 created "2016-06-24" @default.
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• W2400694414 date "2016-05-18" @default.
• W2400694414 modified "2023-10-16" @default.
• W2400694414 title "Effect of pH and chemical mechanical planarization process conditions on the copper–benzotriazole complex formation" @default.
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• W2400694414 doi "https://doi.org/10.7567/jjap.55.06jb01" @default.
• W2400694414 hasPublicationYear "2016" @default.
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