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• W2406008828 abstract "We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a- ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO:Mg TFT exhibits slightly smaller field-effect mobility and much reduced subthreshold slope. The ITZO:Mg TFT shows improved electrical stabilities compared to the ITZO TFT under both positive-bias and negative-bias-illumination stresses. From the Xray photoelectron spectroscopy O1s spectra with fitted curves for ITZO and ITZO:Mg films, we observe that Mg doping contributes to an enhancement of the oxygen bond without oxygen vacancy and a reduction of the oxygen bonds with oxygen vacancies. This result shows that the Mg can be an effective suppressor in a-ITZO TFTs." @default.
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• W2406008828 date "2016-04-30" @default.
• W2406008828 modified "2023-10-18" @default.
• W2406008828 title "Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors" @default.
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• W2406008828 doi "https://doi.org/10.5573/jsts.2016.16.2.198" @default.
• W2406008828 hasPublicationYear "2016" @default.
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