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- W2407172825 abstract "Electronic-detection up to ~0.9 THz using p±/n-well junction diodes in a 45-nm bulk CMOS process is demonstrated. Because the 1/f noise corner frequency is ~1 kHz instead of ~10 MHz common to Schottky and diode-connected nMOS transistor detectors, despite lower responsivity, detectors using a p <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> /n-well diode with an optimized transit time achieve competitive noise equivalent power (NEP) while exhibiting smaller variations. The junction diode has a measured zero-bias cutoff frequency ( fT) of ~1.8 THz. The direct-antenna matched structure can reach a peak optical responsivity (Rv) of 558 V/W at 0.781 THz with a minimum optical NEP of 56 pW/Hz <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sup> at a modulation frequency of 100 kHz." @default.
- W2407172825 created "2016-06-24" @default.
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- W2407172825 date "2016-07-01" @default.
- W2407172825 modified "2023-10-13" @default.
- W2407172825 title "THz Detection Using p<sup>+</sup>/n-Well Diodes Fabricated in 45-nm CMOS" @default.
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- W2407172825 doi "https://doi.org/10.1109/led.2016.2573268" @default.
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