FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2410184850> ?p ?o ?g. }

• W2410184850 endingPage "12037" @default.
• W2410184850 startingPage "12030" @default.
• W2410184850 abstract "The growth of Al2O3 films by atomic layer deposition (ALD) on model sp(2)-graphitic carbon substrates was evaluated following a nitrogen dioxide (NO2) and trimethylaluminum (TMA) pretreatment to deposit an Al2O3 adhesion layer. Al2O3 ALD using TMA and water (H2O) as the reactants was used to grow Al2O3 films on exfoliated highly ordered pyrolitic graphite (HOPG) at 150 °C with and without the pretreatment procedure consisting of five NO2/TMA cycles. The Al2O3 films on HOPG substrates were evaluated using spectroscopic ellipsometry and electrochemical analysis to determine film thickness and quality. These experiments revealed that five NO2/TMA cycles at 150 °C deposited an Al2O3 adhesion layer with a thickness of 5.7 ± 3.6 Å on the HOPG substrate. A larger number of NO2/TMA cycles at 150 °C deposited thicker Al2O3 films until reaching a limiting thickness of ∼80 Å. Electrochemical impedance spectroscopy (EIS) measurements revealed that five cycles of NO2/TMA pretreatment enabled the growth of high quality insulating Al2O3 films with high charge-transfer resistance after only 20 TMA/H2O Al2O3 ALD cycles. In contrast, with no NO2/TMA pretreatment, EIS measurements indicated that 100 TMA/H2O Al2O3 ALD cycles were necessary to produce an insulating Al2O3 film with high charge-transfer resistance. Al2O3 films grown after the NO2/TMA pretreatment at 150 °C were also demonstrated to have better resistance to dissolution in an aqueous environment." @default.
• W2410184850 created "2016-06-24" @default.
• W2410184850 creator A5015384697 @default.
• W2410184850 creator A5030433764 @default.
• W2410184850 creator A5033879679 @default.
• W2410184850 date "2015-05-28" @default.
• W2410184850 modified "2023-10-16" @default.
• W2410184850 title "Growth and Characterization of Al₂O₃ Atomic Layer Deposition Films on sp²-Graphitic Carbon Substrates Using NO₂/Trimethylaluminum Pretreatment" @default.
• W2410184850 cites W1969171395 @default.
• W2410184850 cites W1977053792 @default.
• W2410184850 cites W1978389691 @default.
• W2410184850 cites W1978486924 @default.
• W2410184850 cites W1980516378 @default.
• W2410184850 cites W1981741618 @default.
• W2410184850 cites W1984728344 @default.
• W2410184850 cites W1985081486 @default.
• W2410184850 cites W1994130358 @default.
• W2410184850 cites W1994481181 @default.
• W2410184850 cites W1994493358 @default.
• W2410184850 cites W1995326391 @default.
• W2410184850 cites W1997355096 @default.
• W2410184850 cites W1998081005 @default.
• W2410184850 cites W1999188990 @default.
• W2410184850 cites W2000399637 @default.
• W2410184850 cites W2002738781 @default.
• W2410184850 cites W2022773818 @default.
• W2410184850 cites W2026029417 @default.
• W2410184850 cites W2028896140 @default.
• W2410184850 cites W2032707674 @default.
• W2410184850 cites W2038543506 @default.
• W2410184850 cites W2040333396 @default.
• W2410184850 cites W2043469469 @default.
• W2410184850 cites W2057892740 @default.
• W2410184850 cites W2060715065 @default.
• W2410184850 cites W2075618427 @default.
• W2410184850 cites W2076016288 @default.
• W2410184850 cites W2087899039 @default.
• W2410184850 cites W2094477992 @default.
• W2410184850 cites W2112083836 @default.
• W2410184850 cites W2112614773 @default.
• W2410184850 cites W2112820289 @default.
• W2410184850 cites W2119309397 @default.
• W2410184850 cites W2119473943 @default.
• W2410184850 cites W2139393388 @default.
• W2410184850 cites W2156805743 @default.
• W2410184850 cites W2161928223 @default.
• W2410184850 cites W2171587338 @default.
• W2410184850 cites W2185378721 @default.
• W2410184850 cites W2319671714 @default.
• W2410184850 cites W2319951442 @default.
• W2410184850 cites W2328684285 @default.
• W2410184850 cites W2470357878 @default.
• W2410184850 cites W2487723089 @default.
• W2410184850 cites W2952197875 @default.
• W2410184850 cites W3105472009 @default.
• W2410184850 cites W4211172053 @default.
• W2410184850 doi "https://doi.org/10.1021/acsami.5b02167" @default.
• W2410184850 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/25965097" @default.
• W2410184850 hasPublicationYear "2015" @default.
• W2410184850 type Work @default.
• W2410184850 sameAs 2410184850 @default.
• W2410184850 citedByCount "31" @default.
• W2410184850 countsByYear W24101848502016 @default.
• W2410184850 countsByYear W24101848502017 @default.
• W2410184850 countsByYear W24101848502018 @default.
• W2410184850 countsByYear W24101848502019 @default.
• W2410184850 countsByYear W24101848502020 @default.
• W2410184850 countsByYear W24101848502021 @default.
• W2410184850 countsByYear W24101848502022 @default.
• W2410184850 countsByYear W24101848502023 @default.
• W2410184850 crossrefType "journal-article" @default.
• W2410184850 hasAuthorship W2410184850A5015384697 @default.
• W2410184850 hasAuthorship W2410184850A5030433764 @default.
• W2410184850 hasAuthorship W2410184850A5033879679 @default.
• W2410184850 hasConcept C104779481 @default.
• W2410184850 hasConcept C111368507 @default.
• W2410184850 hasConcept C113196181 @default.
• W2410184850 hasConcept C127313418 @default.
• W2410184850 hasConcept C127413603 @default.
• W2410184850 hasConcept C140205800 @default.
• W2410184850 hasConcept C147789679 @default.
• W2410184850 hasConcept C151730666 @default.
• W2410184850 hasConcept C159985019 @default.
• W2410184850 hasConcept C171250308 @default.
• W2410184850 hasConcept C17525397 @default.
• W2410184850 hasConcept C175708663 @default.
• W2410184850 hasConcept C178790620 @default.
• W2410184850 hasConcept C18293161 @default.
• W2410184850 hasConcept C185592680 @default.
• W2410184850 hasConcept C19067145 @default.
• W2410184850 hasConcept C192562407 @default.
• W2410184850 hasConcept C2777289219 @default.
• W2410184850 hasConcept C2779227376 @default.
• W2410184850 hasConcept C2779698641 @default.
• W2410184850 hasConcept C2816523 @default.
• W2410184850 hasConcept C42360764 @default.
• W2410184850 hasConcept C52859227 @default.
• W2410184850 hasConcept C64297162 @default.

• next