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- W2411008411 abstract "Record high current density of 300 μA/μm with low contact resistance of 200 Ω μm and a channel length of 0.8 μm at a drain-source bias of 1.6 V has been achieved for the first time in MoS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> field-effect transistors (FETs) grown by chemical vapor transport. The low contact resistance is achieved using a polyethylene-oxide cesium-perchlorate solid polymer ion conductor formed by drop casting. The charged ions are placed into position over the channel by the application of a bias to a side gate and then locked into place by lowering the temperature. A weak temperature dependence of the drain current after ion doping indicates that transport in the Schottky contacts is dominated by tunneling." @default.
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- W2411008411 date "2016-04-01" @default.
- W2411008411 modified "2023-09-23" @default.
- W2411008411 title "Record high current density and low contact resistance in MoS2 FETs by ion doping" @default.
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- W2411008411 doi "https://doi.org/10.1109/vlsi-tsa.2016.7480511" @default.
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