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• W2413144924 abstract "For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show that tensile strain decreases bulk carrier density while accentuating transport of topological surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy and density functional theory calculations. The induced strain was confirmed by transmittance X-ray scattering measurements. The results show the possibility of reversible topological surface state device control using structural deformation." @default.
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• W2413144924 date "2015-05-29" @default.
• W2413144924 modified "2023-10-17" @default.
• W2413144924 title "Reversible Fermi Level Tuning of a Sb₂Te₃ Topological Insulator by Structural Deformation" @default.
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• W2413144924 doi "https://doi.org/10.1021/acs.nanolett.5b00553" @default.
• W2413144924 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/26010013" @default.
• W2413144924 hasPublicationYear "2015" @default.
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