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• W2413352534 abstract "In this work, we have demonstrated the synthesis of high-quality monolayered α-In2Se3 using physical vapor deposition method under atmospheric pressure. The quality of the In2Se3 atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and atomic force microscope. The atomically resolved images have been obtained by the annular dark-field scanning transmission electron microscope. The field-effect transistors have been fabricated using the atomically layered In2Se3 and exhibit p-type semiconducting behaviors with the mobility up to 2.5 cm(2)/ Vs. The In2Se3 layers also show a good photoresponsivity of 340A/W, as well as 6 ms response time for the rise and 12 ms for the fall. These results make In2Se3 atomic layers a promising candidate for the optoelectronic and photosensitive device applications." @default.
• W2413352534 created "2016-06-24" @default.
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• W2413352534 date "2015-09-16" @default.
• W2413352534 modified "2023-10-16" @default.
• W2413352534 title "Controlled Synthesis of High-Quality Monolayered α-In₂Se₃ via Physical Vapor Deposition" @default.
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• W2413352534 doi "https://doi.org/10.1021/acs.nanolett.5b01590" @default.
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• W2413352534 hasPublicationYear "2015" @default.
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