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- W2414392885 abstract "Polycrystalline silicon (poly-Si) thin film was prepared by RTCVD (Rapid Thermal Chemical Vapor Deposition) method on poly-Si wafer and high purity SSP (silicon sheet from powder) substrates. Growth rate up to 8~10 μm/min was achieved on poly-Si wafer substrate in 1170°C. The average crystal size of thin film is 30~50 μm for SSP substrate and more than 50μm for poly-Si wafer substrate.The surface morphology of poly-Si thin film was investigated by SEM and metallurgical microscopy. Twins and stacking faults were observed on thin film's surface deposited on SSP substrate in 1170°C. Poly-Si thin film's deposition on suitable substrate is a pivotal step during the thin film solar cells' development. Rapid growth, big grains with little defect are requested for developing high quality Poly-Si thin film. While there are numerous crys- tallographic defects that may°Ccur during the growth process. Some of those defects would bring forth back effect on as-deposited thin film solar cell's electrical properties. By SEM and metallurgical microscopy we have got some information about the surface morphology and crystal defects in the poly-Si thin film." @default.
- W2414392885 created "2016-06-24" @default.
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- W2414392885 date "2010-08-06" @default.
- W2414392885 modified "2023-09-24" @default.
- W2414392885 title "Surface morphology and defects of polycrystalline silicon thin film" @default.
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