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• W2415694342 abstract "Abstract Polycrystalline silicon (poly-Si) film prepared by aluminum-induced crystallization (AIC) of highly phosphorus (P)-doped amorphous silicon has been proposed for suppressing Si islands and voids. Si islands on the poly-Si surface and voids at the interface between the poly-Si and the glass are caused by Si atoms' out-diffusion toward the top surface during the AIC process, which also degrades the electrical characteristics of the film. High-P dopants can form P precipitations and retard the out-diffusion of Si atoms, hence suppressing Si islands and voids. Also, P precipitations can enhance the crystallization rate and grain growth. P dopants act as donors and compensate for the p-type poly-Si film, which is formed by Al doping during the AIC process. The hole concentration of undoped poly-Si is reduced by approximately three orders to 7 × 1012 cm− 3. Such near-neutral poly-Si films could be applied as intrinsic (i) layers in p-i-n structures to explore solar cell applications. Also, the enhanced quality of P-doped AIC-Si increases the mobility by five times owing to reduced scattering and trap density." @default.
• W2415694342 created "2016-06-24" @default.
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• W2415694342 date "2016-11-01" @default.
• W2415694342 modified "2023-10-10" @default.
• W2415694342 title "The effect of high concentration of phosphorus in aluminum-induced crystallization of amorphous silicon films" @default.
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• W2415694342 doi "https://doi.org/10.1016/j.tsf.2016.05.050" @default.
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