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- W2416128107 abstract "Tip-enhanced Raman scattering (TERS) spectroscopy is a technique that employs near-field enhancement from a metallic nanotip to obtain Raman spectra with spatial resolution surpassing the diffraction limit. It is a useful nondestructive way to investigate the nanoscaled semiconductor films. In this paper, TERS technique is used to study the structural and functional properties of nitrogen doped 4H-SiC films. From the same TERS first-order Raman spectra obtained at several locations in 4H-SiC, we were able to reveal a good and uniform crystalline properties in nitrogen doped 4H-SiC. The spectra from tip-on experiments are nearly consistent with that from tip-off experiments. However, by the true near-field component obtained by subtracted tip-off experiment spectra from tip-on experiment spectra, we can see that not all Raman modes have the tip-enhanced effect. In TERS first-order spectra, E2(TO), A1(LO) and E1(TO) modes were enhanced and confined; in TERS electronic Raman scattering from nitrogen in 4H-SiC, Nc and Nd modes were enhanced; in second-order Raman spectra, the overtone modes b, c, d and e were enhanced. But the reason of enhanced effect of these modes is not very clear yet." @default.
- W2416128107 created "2016-06-24" @default.
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- W2416128107 date "2016-04-01" @default.
- W2416128107 modified "2023-09-25" @default.
- W2416128107 title "Tip-enhanced Raman scattering of 4H-SİC films" @default.
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- W2416128107 doi "https://doi.org/10.1109/dtis.2016.7483900" @default.
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