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• W2417507957 endingPage "6463" @default.
• W2417507957 startingPage "6458" @default.
• W2417507957 abstract "DNA nanotechnology is currently widely explored and especially shows promises for advanced lithography due to its ability to define nanometer scale features. We demonstrate a 9 × 14 nm(2) hole pattern transfer from DNA origami into an SiO2 layer with a sub-10-nm resolution using anhydrous HF vapor in a semiconductor etching machine. We show that the resulting SiO2 pattern inherits its shape from the DNA structure within a process time ranging from 30 to 60 s at an etching rate of 0.2 nm/s. At 600 s of etching, the SiO2 pattern meets corrosion and the overall etching reaction is blocked. These results, in addition to the entire surface coverage by magnesium occurring on the substrate at a density of 1.1 × 10(15) atom/cm(2), define a process window, fabrication rules, and limits for DNA-based lithography." @default.
• W2417507957 created "2016-06-24" @default.
• W2417507957 creator A5005086599 @default.
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• W2417507957 date "2016-06-10" @default.
• W2417507957 modified "2023-10-17" @default.
• W2417507957 title "DNA Origami Mask for Sub-Ten-Nanometer Lithography" @default.
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• W2417507957 doi "https://doi.org/10.1021/acsnano.6b00413" @default.
• W2417507957 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/27281227" @default.
• W2417507957 hasPublicationYear "2016" @default.
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