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• W2418984939 startingPage "075001" @default.
• W2418984939 abstract "Abstract WS 2 nanotubes are rolled multiwalled nanotubes made of a layered material, tungsten disulfide. Their fibril structures enable the fabrication of random network films; however, these films are nonconducting, and thus have not been used for electronic applications. Here, we demonstrate that carrier injection into WS 2 networks using an electrolyte gating approach could cause these networks to act as semiconducting channels. We clarify the Raman characteristics of WS 2 nanotubes under electrolyte gating and confirm the feasibility of the injection of electrons and holes. We reveal ambipolar behaviors of the WS 2 nanotube networks in field-effect transistor setups with electrolyte gating." @default.
• W2418984939 created "2016-06-24" @default.
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• W2418984939 date "2016-06-09" @default.
• W2418984939 modified "2023-09-29" @default.
• W2418984939 title "Ambipolar transistors based on random networks of WS₂ nanotubes" @default.
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• W2418984939 doi "https://doi.org/10.7567/apex.9.075001" @default.
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