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• W2420110145 endingPage "8336" @default.
• W2420110145 startingPage "8326" @default.
• W2420110145 abstract "Tungsten nitrido complexes of the type WN(NR2)3 [NR2 = combinations of NMe2, NEt2, NiPr2, NnPr2, NiBu2, piperidine, and azepane] were synthesized as precursors for aerosol-assisted chemical vapor deposition of WNxCy thin films. The effects of the amido substituents on precursor volatility and decomposition were evaluated experimentally and computationally. Films deposited using WN(NMe2)(NiPr2)2 as a single-source precursor were assessed as diffusion barrier materials for Cu metallized integrated circuits in terms of growth rate, surface roughness, composition, and density. In diffusion barrier tests, Cu (∼100 nm)/WNxCy (∼5 nm)/Si samples prepared from WN(NMe2)(NiPr2)2 were annealed for 30 min at 500 °C and successfully blocked Cu penetration according to four-point probe, X-ray diffraction, scanning electron microscopy etch-pit test, and high-resolution transmission electron microscopy measurements." @default.
• W2420110145 created "2016-06-24" @default.
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• W2420110145 date "2015-11-30" @default.
• W2420110145 modified "2023-09-24" @default.
• W2420110145 title "Effect of the Ligand Structure on Chemical Vapor Deposition of WN_<i>x</i>C_<i>y</i> Thin Films from Tungsten Nitrido Complexes of the Type WN(NR₂)₃" @default.
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• W2420110145 doi "https://doi.org/10.1021/acs.chemmater.5b03691" @default.
• W2420110145 hasPublicationYear "2015" @default.
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