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• W2423169273 abstract "Infrared (IR) photon detectors must be cryogenically cooled to provide the highest possible performance, usuallyto temperatures at or below ~ 150K. Such low operating temperatures (Top) impose very stringent requirementson cryogenic coolers. As such, there is a constant push in the industry to engineer new detector architecturesthat operate at higher temperatures, so called higher operating temperature (HOT) detectors. The ultimategoal for HOT detectors is room temperature operation. While this is not currently possibly for photon detectors,significant increases in Top are nonetheless beneficial in terms of reduced size, weight, power and cost (SWAP-C).The most common HgCdTe IR detector architecture is the P+n heterostructure photodiode (where a capital letterindicates a wide band gap relative to the active layer or “AL”). A variant of this architecture, the P+N−n−N−Nheterostructure photodiode, should have a near identical photo-response to the P+n heterostructure, but withsignificantly lower dark diffusion current. The P+N−n−N−N heterostructure utilizes a very low doped AL,surrounded on both sides by wide-gap layers. The low doping in the AL, allows the AL to be fully depleted,which drastically reduces the Auger recombination rate in that layer. Minimizing the Auger recombination ratereduces the intrinsic dark diffusion current, thereby increasing Top. Note when we use the term “recombinationrate” for photodiodes, we are actually referring to the net generation and recombination of minority carriers(and corresponding dark currents) by the Auger process. For these benefits to be realized, these devices mustbe intrinsically limited and well passivated. The focus of this proceeding is on studying the fundamental physicsof the intrinsic dark currents in ideal P+N−n−N−N heterostructures, namely Auger recombination. Due tothe complexity of these devices, specifically the presence of multiple heterojunctions, numerical device modelingtechniques must be utilized to predict and understand the device operation, as analytical models do not existfor heterojunction devices." @default.
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• W2423169273 date "2016-06-17" @default.
• W2423169273 modified "2023-10-18" @default.
• W2423169273 title "Analysis of the auger recombination rate in P⁺<i>N−n−N−N</i>HgCdTe detectors for HOT applications" @default.
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• W2423169273 doi "https://doi.org/10.1117/12.2224383" @default.
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