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• W2431041036 abstract "The variation of electron density in TiO2−x nanochannels, exhibiting resistive switching phenomenon, produced by Ar+ ion-irradiation at the threshold fluence of 5 × 1016 ions/cm2 is demonstrated by X-ray reflectivity (XRR). The transmission electron microscopy reveals the formation of nanochannels, while the energy dispersive X-ray spectroscopy confirms Ti enrichment near the surface due to ion-irradiation, in consistent with the increase in electron density by XRR measurements. Such a variation in Ti concentration indicates the evolution of oxygen vacancies (OVs) along the TiO2−x nanochannels, and thus paves the way to explain the operation and performance of the Pt/TiO2−x/Pt-based memory devices via OV migration." @default.
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• W2431041036 date "2016-06-13" @default.
• W2431041036 modified "2023-09-26" @default.
• W2431041036 title "Probing electron density across Ar⁺ irradiation-induced self-organized TiO₂₋_<i>x</i> nanochannels for memory application" @default.
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• W2431041036 doi "https://doi.org/10.1063/1.4954166" @default.
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