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- W2433319682 abstract "Self-assembled GaAs nanowires were grown by molecular beam epitaxy (MBE) on un-pretreated Si(111) substrates under different As4/Ga flux ratios (V/III ratios). It has been found that the fraction of vertical wires would be nearly 100% when the As4/Ga ratio arrives 90. The transmission electron microscopy (TEM) and micro-photoluminescence (PL) spectra results have indicated that the GaAs nanowires grown under a larger V/III ratio (90) have a pure ZB structure. Field-effect transistors (FET) based on single nanowire were fabricated with GaAs nanowires grown under the larger V/III ratio (90). The characteristics of the FET reveal a hole concentration of 3.919×1017 cm−3 and a hole mobility of 0.417 cm2 V−1s−1. Photodetectors based on single nanowire and multiple nanowires structure with a metal-semiconductor-metal (MSM) electrode configuration have been proposed and demonstrated. All the photodetectors operating at room temperature exhibit good photoconductive performance, excellent stability, reproducibility and superior peak responsivity (87.67 A/W under 5 V for single nanowire photodetector)." @default.
- W2433319682 created "2016-06-24" @default.
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- W2433319682 date "2016-09-01" @default.
- W2433319682 modified "2023-09-23" @default.
- W2433319682 title "Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111)" @default.
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- W2433319682 doi "https://doi.org/10.1016/j.mssp.2016.05.015" @default.
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