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• W2433990157 abstract "In-situ plasma-enhanced atomic layer deposition (PEALD) technique was employed for device passivation to realize a high-performance inversion-mode HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.53</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.47</sub> As metal-oxide-semiconductor field-effect transistor (MOSFET). Excellent quality of gate dielectric is enabled by utilizing the PEALD-aluminum nitride as a pre-gate interfacial layer, followed by a post-gate remote-plasma gas treatment. In-situ PEALD treatment led to enhanced dc characteristics, such as drain current, peak transconductance, subthreshold swing, OFF leakage current, and effective electron mobility. X-ray photoelectron spectroscopy analysis indicates a reduction of In- and Ga-related signals. Furthermore, small drain current hysteresis and low-interface state density (D <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> ) value confirm a high interfacial quality for the high-k/III-V structure. Overall, the PEALD passivation for HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.53</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.47</sub> As interface shows a remarkable improvement on the MOSFET performance." @default.
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• W2433990157 date "2016-01-01" @default.
• W2433990157 modified "2023-09-27" @default.
• W2433990157 title "Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors" @default.
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• W2433990157 doi "https://doi.org/10.1109/led.2016.2581175" @default.
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