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- W2442116110 abstract "HgCdTe (MCT) is predominantly used for infrared imaging applications even in SWIR region. However, MCT isexpensive and contains environmentally hazardous substances. Therefore, its application has been restricted mainlymilitary and scientific use and was not spread to commercial use. InGaAs/GaAsSb type-II quantum well structures areconsidered as an attractive material for realizing low dark current PDs owing to lattice-matching to InP substrate. Moreover,III-V compound material systems are suitable for commercial use. In this report, we describe successful operation of focalplane array (FPA) with InGaAs/GaAsSb quantum wells and mention improvement of optical characteristics. Planar typepin-PDs with 250-pairs InGaAs(5nm)/GaAsSb(5nm) quantum well absorption layer were fabricated. The p-n junction wasformed in the absorption layer by the selective diffusion of zinc. Electrical and optical characteristics of FPA or pin-PDswere investigated. Dark current of 1μA/cm 2 at 210K, which showed good uniformity and led to good S/N ratio in SWIRregion, was obtained. Further, we could successfully reduce of stray light in the cavity of FPA with epoxy resin. As aresult, the clear image was taken with 320x256 format and 7% contrast improvement was achieved. Reliability test of10,000 heat cycles was carried out. No degradations were found in FPA characteristics of the epoxy coated sample. Thisresult means FPA using InGaAs/GaAsSb type-II quantum wells is a promising candidate for commercial applications." @default.
- W2442116110 created "2016-06-24" @default.
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- W2442116110 date "2016-06-17" @default.
- W2442116110 modified "2023-09-23" @default.
- W2442116110 title "Recent development of SWIR focal plane array with InGaAs/GaAsSb type-II quantum wells" @default.
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- W2442116110 doi "https://doi.org/10.1117/12.2229591" @default.
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