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• W2460151865 endingPage "1043" @default.
• W2460151865 startingPage "1037" @default.
• W2460151865 abstract "We report a successful tuning of the hole doping level over a wide range in high temperature superconductor (hbox {Bi}_2hbox {Sr}_2hbox {CaCu}_2hbox {O}_{8+delta }) (Bi2212) through successive in situ potassium (K) deposition. By taking high resolution angle-resolved photoemission measurements on the Fermi surface and band structure of an overdoped Bi2212 ( (T_mathrm{c}=76) K) at different stages of K deposition, we found that the area of the hole-like Fermi surface around the Brillouin zone corner ( (pi ) , (pi ) ) shrinks with increasing K deposition. This indicates a continuous hole concentration change from initial (sim ) 0.26 to eventual 0.09 after extensive K deposition, a net doping level change of 0.17 that makes it possible to bring Bi2212 from being originally overdoped, to optimally-doped, and eventually becoming heavily underdoped. The electronic behaviors with K deposition are consistent with those of Bi2212 samples with different hole doping levels. These results demonstrate that K deposition is an effective way of in situ controlling the hole concentration in Bi2212. This work opens a good way of studying the doping evolution of electronic structure and establishing the electronic phase diagram in Bi2212 that can be extended to other cuprate superconductors." @default.
• W2460151865 created "2016-07-22" @default.
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• W2460151865 date "2016-07-01" @default.
• W2460151865 modified "2023-10-15" @default.
• W2460151865 title "In situ carrier tuning in high temperature superconductor Bi2Sr2CaCu2O8+ by potassium deposition" @default.
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• W2460151865 doi "https://doi.org/10.1007/s11434-016-1106-y" @default.
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