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• W2461415286 abstract "We focus on a simulation study to probe the mitigation of electric fields, especially at the edges of metal contacts to SiC-based photoconductive switches. Field reduction becomes germane given that field-induced failures near contacts have been reported. A dual strategy of extending metal contacts to effectively spread the electric field over a larger distance and to employ HfO2 as a high- ${k}$ dielectric, is discussed. Simulation results show that peak electric fields can be lowered by up to $sim 67$ % relative to a standard design. Finally, our calculations predict that the internal temperature rise for a $sim 7$ -ns laser pulse and applied voltages around 20 kV (typical experimental values) would also be effectively controlled." @default.
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• W2461415286 date "2016-01-01" @default.
• W2461415286 modified "2023-09-23" @default.
• W2461415286 title "Contact Extensions Over a High-k Dielectric Layer for Surface Field Mitigation in High Power 4H-SiC Photoconductive Switches" @default.
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• W2461415286 doi "https://doi.org/10.1109/ted.2016.2577547" @default.
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