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- W2461453825 abstract "Hafnium oxide–aluminum oxide (HfAlO) dielectric films were cosputtered using and targets, and their properties are studied in comparison with pure films. The X-ray diffraction studies confirmed that the films are nanocrystalline with a monoclinic phase. The as-deposited HfAlO films with a chemical composition of are amorphous even after annealing at . Further, the cosputtered films show a slight reduction in leakage current. The leakage current density may be significantly reduced below at an electric field of 0.25 MV/cm when applying the proper radio-frequency bias to the substrate." @default.
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- W2461453825 date "2009-01-01" @default.
- W2461453825 modified "2023-10-01" @default.
- W2461453825 title "Room-Temperature Cosputtered HfO[sub 2]–Al[sub 2]O[sub 3] Multicomponent Gate Dielectrics" @default.
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- W2461453825 doi "https://doi.org/10.1149/1.3186643" @default.
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