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- W2463168051 abstract "In n-Si crystals irradiated with 25 MeV protons, there is observed a drastic increase in electron Hall mobility. This fact reveals that, within the crystal bulk there are formed regions with conductivity significantly exceeding that of matrix, i.e. “metallic” inclusions. In process of isochronous annealing, mentioned “metallic” inclusions are converted into “dielectric” ones, i.e. regions with effective conductivity significantly less than that of matrix. On the basis of such a kind of semiconducting materials, it can be designed opto-, micro- and nanoelectronic devices, including nuclear radiation nanosensors." @default.
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- W2463168051 date "2016-01-01" @default.
- W2463168051 modified "2023-09-27" @default.
- W2463168051 title "Formation and Annealing of Nano-sized Atomic Clusters in n-Si Crystals Irradiated with High-Energy Protons" @default.
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- W2463168051 doi "https://doi.org/10.1007/978-94-017-7468-0_4" @default.
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