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- W2463756760 abstract "In this letter we report the direct observation of electron heating in an electric field using hot‐electron spectroscopy. The device structure used for the study was a graded band‐gap base heterojunction bipolar transistor, fabricated in the GaAs/AlGaAs semiconductor alloy system. A thermal electron distribution at 4.2 K was injected from the emitter into the base of a transistor that was compositionally graded to yield a quasielectric field of 20 kV cm−1 . The equilibrium electron distribution was heated by the electric field and could be characterized at the end of the 900 A base region by an effective electron temperature of 650 K." @default.
- W2463756760 created "2016-07-22" @default.
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- W2463756760 date "1988-01-01" @default.
- W2463756760 modified "2023-09-28" @default.
- W2463756760 title "Hot Electron Transport in a Graded Band Gap Base Heterojunction Bipolar Transistor" @default.
- W2463756760 doi "https://doi.org/10.7567/ssdm.1988.s-iiia-8" @default.
- W2463756760 hasPublicationYear "1988" @default.
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