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• W2464384053 endingPage "2408" @default.
• W2464384053 startingPage "2399" @default.
• W2464384053 abstract "We grew Gallium Nitride Nanowires (GaN-NWs) thin films on p-type silicon substrate (100) by thermal CVD process using nickel as catalyst. These NWs were synthesized at low NH3 flow rate varying from 2 to 12 sccm while maintaining constant flow of N2 gas at 120 sccm. The microstructure of GaN-NWs shows the NWs diameters ranging from 40 to 80 nm and length of several micrometers. Room temperature photoluminescence (PL) spectra of GaN-NWs show a broad emission peak in range of 2.4 – 3.1 eV. The chemical network studies of GaN-NWs reveal the existence of prominent transverse optic (TO) and longitudinal optic (LO) peak at 548 cm-1 and 795 cm-1 respectively. However, the pronounced blue shifting of LO peak was observed with increasing of NH3 flow rate. In addition, we also observed several vibrational peak located at 235 cm-1, 408 cm-1, 676 cm-1, 1123 cm-1, 1228 cm-1, 1511 cm-1 and 2234 cm-1 corresponding to Zone Boundary (ZB) phonon, acoustic overtone, surface optic phonon, 2 E1 (TO), 2 E2 (high), 2 A1 (LO) and 3 A1 (LO) respectively. However, the full width at half maximum (FWHM) increases with increasing NH3 flow rates." @default.
• W2464384053 created "2016-07-22" @default.
• W2464384053 creator A5025052665 @default.
• W2464384053 creator A5080432906 @default.
• W2464384053 date "2016-01-01" @default.
• W2464384053 modified "2023-10-03" @default.
• W2464384053 title "Chemical network studies of Gallium Nitride Nanowires grown at Low NH3 flow rates" @default.
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• W2464384053 doi "https://doi.org/10.1016/j.matpr.2016.04.154" @default.
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