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• W2464518929 abstract "The deposition of polysilicon thin films on silicon wafers using low-pressure chemical vapour deposition (LPCVD) was carried out and the process parameters were optimized to obtain normal and low stress films. The films of thickness 150 nm to 2 microns were deposited on 4 and 6 silicon wafers and the thickness uniformity was measured using Dektak 6M surface profiler. The thickness variation across the wafer was found to be in 5-10% range. Stress measurements were carried out using X-ray diffraction method. We were able to deposit low stress films with stress ∼14 MPa. The quality of the films was found to be good and.they were used in fabrication of MEMS based silicon devices." @default.
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• W2464518929 date "2007-04-01" @default.
• W2464518929 modified "2023-09-26" @default.
• W2464518929 title "Deposition of low stress polysilicon thin films using low-pressure chemical vapour deposition" @default.
• W2464518929 hasPublicationYear "2007" @default.
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