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• W2464669091 endingPage "025102" @default.
• W2464669091 startingPage "025102" @default.
• W2464669091 abstract "With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si–QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si–C bonds in the amorphous matrix and the embedded high density tiny nc-Si–QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si–QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si–QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si–QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si–QD/a-SiC:H films grown at ∼300 °C, demonstrating wide optical gap ∼1.86–1.96 eV and corresponding high electrical conductivity ∼4.5 × 10−1–1.4 × 10−2 S cm−1, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration." @default.
• W2464669091 created "2016-07-22" @default.
• W2464669091 creator A5062382202 @default.
• W2464669091 creator A5082736038 @default.
• W2464669091 date "2016-07-14" @default.
• W2464669091 modified "2023-09-25" @default.
• W2464669091 title "Opto-electronic properties of P-doped nc-Si–QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration" @default.
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• W2464669091 doi "https://doi.org/10.1063/1.4956205" @default.
• W2464669091 hasPublicationYear "2016" @default.
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