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W2464797005 abstract "The effect of silicon doping on the growth and properties of ∼1.0μm-thick AlxGa1-xN(0.50≤x≤0.55) layers grown on semipolar (112¯2)AlN templates by metalorganic vapour phase epitaxy was studied. The layers were grown with different disilane/group-III precursors ratios that varied from 2.8×10−5 to 3.4×10−4. The surface morphology of the Si-doped (112¯2)AlGaN layers showed undulations along [11¯00]AlGaN,AlN with a root-mean square roughness of about 4.0 nm within a scan range of 20×20μm2. Different photoluminescence peaks have been linked to negatively charged cation vacancies (VIII3−) and their complexes with impurities such as VIII3−-3ON1+, (VIII complex)1−, and (VIII complex)2−. The optimised AlGaN:Si layer exhibited a carrier concentration of ∼1.2×1019 cm−3, a carrier mobility of 30.7 cm2/V s, and a resistivity of 0.018Ωcm, as determined by Hall-effect measurements at room temperature. A correlation between the resistivity and luminescence emission intensities of AlGaN near-band-edge and impurity-related complexes was found." @default.
W2464797005 created "2016-07-22" @default.
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W2464797005 date "2016-10-01" @default.
W2464797005 modified "2023-10-16" @default.
W2464797005 title "Silicon doping of semipolar <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML altimg=si0031.gif overflow=scroll><mml:mrow><mml:mo stretchy=true>(</mml:mo><mml:mn>11</mml:mn><mml:mover accent=true><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mrow><mml:mo>¯</mml:mo></mml:mrow></mml:mover><mml:mn>2</mml:mn><mml:mo stretchy=true>)</mml:mo><mml:mspace width=0.25em /><mml:mrow><mml:msub subscriptshift=65%><mml:mrow><mml:mi>Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:…" @default.
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W2464797005 doi "https://doi.org/10.1016/j.jcrysgro.2016.07.013" @default.
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