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• W2465682205 startingPage "19192" @default.
• W2465682205 abstract "The effects of electron-beam irradiation on the organic semiconductor rubrene and its application as a dosimeter was investigated. Through the measurements of photoluminescence and the ultraviolet photoelectron spectroscopy, we found that electron-beam irradiation induces n-doping of rubrene. Additionally, we fabricated rubrene thin-film transistors with pristine and irradiated rubrene, and discovered that the decrease in transistor properties originated from the irradiation of rubrene and that the threshold voltages are shifted to the opposite directions as the irradiated layers. Finally, a highly sensitive and air-stable electron dosimeter was fabricated based on a rubrene transistor." @default.
• W2465682205 created "2016-07-22" @default.
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• W2465682205 date "2016-07-25" @default.
• W2465682205 modified "2023-09-22" @default.
• W2465682205 title "Effect of Electron-Beam Irradiation on Organic Semiconductor and Its Application for Transistor-Based Dosimeters" @default.
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• W2465682205 doi "https://doi.org/10.1021/acsami.6b05555" @default.
• W2465682205 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/27399874" @default.
• W2465682205 hasPublicationYear "2016" @default.
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