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- W2465966310 abstract "In this work, we investigate the temperature-dependent thermal conductivities of few nanometer thick alternating stacks of amorphous dielectrics, specifically SiO2/Al2O3 and SiO2/Si3N4. Experiments using steady-state Joule-heating and electrical thermometry, while using a micro-miniature refrigerator over a wide temperature range (100–500 K), show that amorphous thin-film multilayer SiO2/Si3N4 and SiO2/Al2O3 exhibit through-plane room temperature effective thermal conductivities of about 1.14 and 0.48 W/(m × K), respectively. In the case of SiO2/Al2O3, the reduced conductivity is attributed to lowered film density (7.03 → 5.44 × 1028 m–3 for SiO2 and 10.2 → 8.27 × 1028 m–3 for Al2O3) caused by atomic layer deposition of thin-films as well as a small, finite, and repeating thermal boundary resistance (TBR) of 1.5 m2 K/GW between dielectric layers. Molecular dynamics simulations reveal that vibrational mismatch between amorphous oxide layers is small, and that the TBR between layers is largely due to imperf..." @default.
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- W2465966310 date "2016-07-07" @default.
- W2465966310 modified "2023-10-17" @default.
- W2465966310 title "Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction" @default.
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- W2465966310 doi "https://doi.org/10.1063/1.4955165" @default.
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