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• W2466736910 abstract "Abstract In order to comparatively study the growth and characterization of silicon oxide films on Si-based substrates, top-cut solar grade silicon (SOG-Si) containing Si 3 N 4 rods and SiC lumps were used as raw materials and respectively heated at 1773 K and 1873 K under Ar gas. The samples were investigated by Focus Ion Beam/Scanning Electron Microscope (FIB/SEM) and Energy Dispersive Spectroscopy (EDS). Results indicated that silicon oxides with different morphologies successfully grew on the substrates via various mechanisms. Passive oxidation was evident in the formation of a dense SiO 2 surface layer on the base material at 1773 K, while active oxidation was evident in the formation of SiO 2 with particle, rod, and nanowire-like morphologies, which was the re-oxidation product of SiO at 1873 K under the active-to-passive transition. Si, SiC, and Si 3 N 4 have the similar oxidation tendency to form silicon oxides under either passive or active regimes." @default.
• W2466736910 created "2016-07-22" @default.
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• W2466736910 date "2016-11-01" @default.
• W2466736910 modified "2023-10-18" @default.
• W2466736910 title "Growth and characterization of silicon oxide films formed in the presence of Si, SiC, and Si3N4" @default.
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• W2466736910 doi "https://doi.org/10.1016/j.mssp.2016.06.014" @default.
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