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- W2469184644 abstract "Doped polysilicon is used as a via fill material for through silicon via technology. Boron doping is used to reduce the polysilicon resistivity but boron doping significantly decreases the polish removal rate. Here the influence of slurry characteristics, chemistry and abrasive properties, on the chemical mechanical polishing of heavily boron-doped polysilicon is investigated. The effect of slurry pH on silica abrasive size and colloidal stability is examined as well as the influence of these effects on the polish rate. The optimum abrasive concentration is ∼6 wt% and higher concentrations did not improve the polish rate due to the saturation of slurry particles on the wafer surface. Smaller abrasive particles, with 10 times higher surface area per unit weight improved the polish rate ∼20%. Finally, polish conditions with mechanical and chemical dominance are compared." @default.
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- W2469184644 date "2016-01-01" @default.
- W2469184644 modified "2023-09-23" @default.
- W2469184644 title "The Effect of Slurry Properties on the CMP Removal Rate of Boron Doped Polysilicon" @default.
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- W2469184644 doi "https://doi.org/10.1149/2.0151605jss" @default.
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