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• W2469208141 abstract "High-performance Fe-FET memories using InSiO and P(VDF–TrFE) as the semiconductor and dielectric, respectively, were fabricated with a carrier mobility of 84.1 cm V⁻¹ s⁻¹." @default.
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• W2469208141 date "2016-01-01" @default.
• W2469208141 modified "2023-10-16" @default.
• W2469208141 title "High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer" @default.
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• W2469208141 doi "https://doi.org/10.1039/c6tc01768a" @default.
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