Matches in SemOpenAlex for { <https://semopenalex.org/work/W2470222186> ?p ?o ?g. }
Showing items 1 to 88 of
88
with 100 items per page.
- W2470222186 abstract "The X-ray standing wave technique is applied to analyze initial structure of ultrathin GaAs/Si(111) and GaAs/Si(100) epitaxial layers grown by molecular beam epitaxy and metal-organic molecular beam epitaxy. We used two GaAs/Si(111) samples prepared with As adsorption and without As adsorption before GaAs growth, and one GaAs/Si(100) sample prepared under the same conditions as final GaAs layers being a single domain. Roughness and continuity of GaAs/Si interfaces were characterized using high resolution transmission micrographs before X-ray standing wave analysis. The sample with the initial Si(111)1×1 surface passivated by As atoms shows the same fluorescence profiles of Ga and As reported previously. When Ga was deposited first on the initial surface, however, fluorescence profiles suggested that about half of the interfacial Ga atoms are exchanged with As atoms, leaving both Si-Ga-As and Si-As-Ga bondings at the interface. The GaKα fluorescence profile of the GaAs/Si(100) sample showed a behavior similar to that of GaAs/Si(111) without As passivation. This suggests that double domain formation of GaAs is dominant at the initial stage of GaAs growth, even the final layer structure is a single domain. From the theoretical calculation, the ratios of these two domains at the initial stage are estimated to be about 0.4 and 0.6." @default.
- W2470222186 created "2016-07-22" @default.
- W2470222186 creator A5012755374 @default.
- W2470222186 creator A5015809855 @default.
- W2470222186 creator A5036315103 @default.
- W2470222186 creator A5038291702 @default.
- W2470222186 creator A5048964248 @default.
- W2470222186 creator A5051553079 @default.
- W2470222186 creator A5060362240 @default.
- W2470222186 creator A5062479638 @default.
- W2470222186 creator A5078219838 @default.
- W2470222186 creator A5086503238 @default.
- W2470222186 date "1992-01-01" @default.
- W2470222186 modified "2023-10-03" @default.
- W2470222186 title "X-Ray Standing Wave Analysis of GaAs/Si Interface" @default.
- W2470222186 doi "https://doi.org/10.7567/ssdm.1992.s-ii-4" @default.
- W2470222186 hasPublicationYear "1992" @default.
- W2470222186 type Work @default.
- W2470222186 sameAs 2470222186 @default.
- W2470222186 citedByCount "0" @default.
- W2470222186 crossrefType "proceedings-article" @default.
- W2470222186 hasAuthorship W2470222186A5012755374 @default.
- W2470222186 hasAuthorship W2470222186A5015809855 @default.
- W2470222186 hasAuthorship W2470222186A5036315103 @default.
- W2470222186 hasAuthorship W2470222186A5038291702 @default.
- W2470222186 hasAuthorship W2470222186A5048964248 @default.
- W2470222186 hasAuthorship W2470222186A5051553079 @default.
- W2470222186 hasAuthorship W2470222186A5060362240 @default.
- W2470222186 hasAuthorship W2470222186A5062479638 @default.
- W2470222186 hasAuthorship W2470222186A5078219838 @default.
- W2470222186 hasAuthorship W2470222186A5086503238 @default.
- W2470222186 hasConcept C110738630 @default.
- W2470222186 hasConcept C113196181 @default.
- W2470222186 hasConcept C147789679 @default.
- W2470222186 hasConcept C150394285 @default.
- W2470222186 hasConcept C159985019 @default.
- W2470222186 hasConcept C171250308 @default.
- W2470222186 hasConcept C185592680 @default.
- W2470222186 hasConcept C192562407 @default.
- W2470222186 hasConcept C2779227376 @default.
- W2470222186 hasConcept C33574316 @default.
- W2470222186 hasConcept C3792809 @default.
- W2470222186 hasConcept C43617362 @default.
- W2470222186 hasConcept C49040817 @default.
- W2470222186 hasConcept C71039073 @default.
- W2470222186 hasConcept C8010536 @default.
- W2470222186 hasConceptScore W2470222186C110738630 @default.
- W2470222186 hasConceptScore W2470222186C113196181 @default.
- W2470222186 hasConceptScore W2470222186C147789679 @default.
- W2470222186 hasConceptScore W2470222186C150394285 @default.
- W2470222186 hasConceptScore W2470222186C159985019 @default.
- W2470222186 hasConceptScore W2470222186C171250308 @default.
- W2470222186 hasConceptScore W2470222186C185592680 @default.
- W2470222186 hasConceptScore W2470222186C192562407 @default.
- W2470222186 hasConceptScore W2470222186C2779227376 @default.
- W2470222186 hasConceptScore W2470222186C33574316 @default.
- W2470222186 hasConceptScore W2470222186C3792809 @default.
- W2470222186 hasConceptScore W2470222186C43617362 @default.
- W2470222186 hasConceptScore W2470222186C49040817 @default.
- W2470222186 hasConceptScore W2470222186C71039073 @default.
- W2470222186 hasConceptScore W2470222186C8010536 @default.
- W2470222186 hasLocation W24702221861 @default.
- W2470222186 hasOpenAccess W2470222186 @default.
- W2470222186 hasPrimaryLocation W24702221861 @default.
- W2470222186 hasRelatedWork W1968641775 @default.
- W2470222186 hasRelatedWork W1970222366 @default.
- W2470222186 hasRelatedWork W1975065758 @default.
- W2470222186 hasRelatedWork W1988501249 @default.
- W2470222186 hasRelatedWork W2014847189 @default.
- W2470222186 hasRelatedWork W2030426613 @default.
- W2470222186 hasRelatedWork W2034774134 @default.
- W2470222186 hasRelatedWork W2035139364 @default.
- W2470222186 hasRelatedWork W2046605354 @default.
- W2470222186 hasRelatedWork W2121218079 @default.
- W2470222186 hasRelatedWork W2318186079 @default.
- W2470222186 hasRelatedWork W2333898752 @default.
- W2470222186 hasRelatedWork W2753348795 @default.
- W2470222186 hasRelatedWork W2767516339 @default.
- W2470222186 hasRelatedWork W2815956490 @default.
- W2470222186 hasRelatedWork W2999284659 @default.
- W2470222186 hasRelatedWork W82548105 @default.
- W2470222186 hasRelatedWork W1968675779 @default.
- W2470222186 hasRelatedWork W1970809728 @default.
- W2470222186 hasRelatedWork W2154431690 @default.
- W2470222186 isParatext "false" @default.
- W2470222186 isRetracted "false" @default.
- W2470222186 magId "2470222186" @default.
- W2470222186 workType "article" @default.