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- W2470983477 abstract "Single crystalline β-Ga2O3 nanowires with different Zn doping contents were grown via catalytic chemical vapor deposition method. The field-emission scanning electron microscopy showed that when the Zn content was 1.3%, the Zn doped β-Ga2O3 nanowires with uniform size and high density were synthesized. The diameter and length of nanowires were about 50 nm and dozens of micron, respectively. The X-ray diffraction measurements indicated that the position of (202) diffraction peak of samples shifted toward lower diffracting angle with increasing Zn content, which was explained by the substitution of Ga3+ by Zn2+ during Zn doping process. Furthermore, the Zn-doped β-Ga2O3 nanowires/n-type β-Ga2O3 thin film p-n homojunction was fabricated. The current-voltage (I-V) characteristic of the homojunction device showed a good rectifying behavior. This result is suggested that the Zn doped β-Ga2O3 nanowires showed p-type conductivity." @default.
- W2470983477 created "2016-07-22" @default.
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- W2470983477 date "2016-12-01" @default.
- W2470983477 modified "2023-10-14" @default.
- W2470983477 title "Catalytic growth and characterization of single crystalline Zn doped p-type β-Ga2O3 nanowires" @default.
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- W2470983477 doi "https://doi.org/10.1016/j.jallcom.2016.06.274" @default.
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