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- W2471857788 abstract "The possibilities of quantitative secondary ion mass spectrometry (SIMS) depth profiling of Al in AlxGa1 − xN/AlN/GaN transistor heterostructures are shown. Using a series of test structures for a TOF.SIMS-5 time-of-flight mass spectrometer, we obtained a refined linear calibration dependence of the secondary-ion yield on the composition ×, namely, Y(CsAl+)/Y(CsGa+) = K × x/(1 − x), with a high linear correlation coefficient, Rl = 0.9996, which permits quantitative SIMS analysis of relatively thick AlGaN barrier layers. The method of profile reconstruction with allowance for the main artifacts of ion sputtering has been first applied for the analysis of GaN/AlGaN/AlN/GaN high electron mobility transistor structure. This method permits to perform quantitative analysis of the thickness and composition of a nanometer-thin AlN sublayer and to estimate the measurement error. For the structure being studied, the AlN sublayer is 1.2 ± 0.2 nm thick. Copyright © 2016 John Wiley & Sons, Ltd." @default.
- W2471857788 created "2016-07-22" @default.
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- W2471857788 date "2016-06-29" @default.
- W2471857788 modified "2023-09-27" @default.
- W2471857788 title "Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers" @default.
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- W2471857788 doi "https://doi.org/10.1002/sia.6068" @default.
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