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- W2472040401 abstract "Abstract Resistive Random Access Memory (RRAM) array is considered as a promising trend for future memory devices. At present, the integration of RRAM array into CMOS circuit is limited by the density and scale of the memory element. In this paper, a new way to fabricate RRAM array with submicron meter range element size is proposed. Porous SiO 2 film with large and uniform through-holes is prepared as nano-template for device fabrication. Plasma oxidation is utilized to grow 100 nm titanium oxide resistive switching (RS) layer. Discrete circular RS cells with diameter of 400 nm are obtained, with a vertical structure of Ag TiO 2 Ti Pt Ti Si, from top to bottom. Good and uniform RS properties are acquired by conductive Atomic Force Microscope (cAFM)." @default.
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- W2472040401 date "2016-10-01" @default.
- W2472040401 modified "2023-10-17" @default.
- W2472040401 title "A simple implement of submicron meter RRAM array based on porous SiO 2 film with uniform and large pores" @default.
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- W2472040401 doi "https://doi.org/10.1016/j.vacuum.2016.07.001" @default.
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