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• W2472339691 abstract "Enhancement-mode multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs), which are an immensely important component toward low-power electronics based on a two-dimensional layered semiconductor, are demonstrated using the fluoropolymer CYTOP as a gate dielectric. The fabricated devices exhibit threshold voltage (VTH) of ∼5.7 V with field-effect mobility (μFE) of up to 82.3 cm2/V s, and the characteristics are compared with the depletion-mode characteristics of MoS2 FETs with the cross-linked Poly(4-vinylphenol) gate dielectric (VTH ∼ −7.8 V). UV photoelectron spectroscopy analysis indicates that increased surface potential due to the surface dipole effect of the fluorine group influences the positive VTH shift." @default.
• W2472339691 created "2016-07-22" @default.
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• W2472339691 date "2016-06-27" @default.
• W2472339691 modified "2023-10-16" @default.
• W2472339691 title "Enhancement-mode operation of multilayer MoS2 transistors with a fluoropolymer gate dielectric layer" @default.
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• W2472339691 doi "https://doi.org/10.1063/1.4955024" @default.
• W2472339691 hasPublicationYear "2016" @default.
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