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- W2473018855 abstract "The low-temperature electrical characteristics of strained-Si metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated as a step towards determining the mechanisms responsible for the improved mobility of these devices. If the increased mobility is due to a reduction in the inter-valley (-band) phonon scattering, the increase should fall with temperature. We found that the ratios by which both the electron and hole mobility of a strained-Si MOSFET are lower than those for a conventional Si MOSFET do not significantly decrease with temperature. The result indicates that a reduction in average effective mass may make a greater contribution to the improved mobility than the reduction of phonon scattering." @default.
- W2473018855 created "2016-07-22" @default.
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- W2473018855 date "2002-01-01" @default.
- W2473018855 modified "2023-09-27" @default.
- W2473018855 title "Low-Temperature Electrical Characteristics of Strained-Si MOSFETs" @default.
- W2473018855 doi "https://doi.org/10.7567/ssdm.2002.a-4-4" @default.
- W2473018855 hasPublicationYear "2002" @default.
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