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• W2473480843 startingPage "085501" @default.
• W2473480843 abstract "Abstract We demonstrated the creation of atomically ordered side-surfaces and examined the perfection of the side-surface structures. Atomically reconstructed Si{100}, {110}, and {111} side-surfaces , which are perpendicular to planar surfaces, were first realized on three-dimensionally patterned Si substrates. The 2 × 1, 16 × 2, and 7 × 7 diffraction spots from the side-surfaces were confirmed by reflection high-energy electron diffraction. Epitaxial ultrathin metal and metal silicide films with an atomically matched lateral interface were grown on the side-surfaces. Methods of creating and observing well-defined surfaces enable the epitaxial growth of an arbitrary geometry, which becomes a key technique for nanoconstruction in three-dimensional space." @default.
• W2473480843 created "2016-07-22" @default.
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• W2473480843 date "2016-07-01" @default.
• W2473480843 modified "2023-09-23" @default.
• W2473480843 title "Methods of creating and observing atomically reconstructed vertical Si{100}, {110}, and {111} side-surfaces" @default.
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• W2473480843 doi "https://doi.org/10.7567/apex.9.085501" @default.
• W2473480843 hasPublicationYear "2016" @default.
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