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- W2473687864 abstract "We report on a comparative study of transfer doping of hydrogenated single crystal diamond surface by insulators featured by high electron affinity, such as Nb2O5, WO3, V2O5, and MoO3. The low electron affinity Al2O3 was also investigated for comparison. Hole transport properties were evaluated in the passivated hydrogenated diamond films by Hall effect measurements, and were compared to un-passivated diamond films (air-induced doping). A drastic improvement was observed in passivated samples in terms of conductivity, stability with time, and resistance to high temperatures. The efficiency of the investigated insulators, as electron accepting materials in hydrogenated diamond surface, is consistent with their electronic structure. These surface acceptor materials generate a higher hole sheet concentration, up to 6.5 × 1013 cm−2, and a lower sheet resistance, down to 2.6 kΩ/sq, in comparison to the atmosphere-induced values of about 1 × 1013 cm−2 and 10 kΩ/sq, respectively. On the other hand, hole mobiliti..." @default.
- W2473687864 created "2016-07-22" @default.
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- W2473687864 date "2016-07-14" @default.
- W2473687864 modified "2023-09-30" @default.
- W2473687864 title "Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators" @default.
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- W2473687864 doi "https://doi.org/10.1063/1.4955469" @default.
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