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- W2474091871 abstract "本文介绍的MESFET/SOS微波差分放大器是在蓝宝石衬底上硅外延薄膜内制备的.该电路特征线宽为1μm,制备工艺简单,仅需三块掩模,应用全离子工艺,具有足够小的漂移电压和失调电流.由于采用蓝宝石为衬底,大大减小了寄生电容,从而获得高的频率特性.在77K时对器件的测量结果表明,低温下器件的直流和微波特性均获得显著的改善.直流本征跨导增加了约46%,单位电流增益频率从4.9GHz增加到6.5GHz.作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高." @default.
- W2474091871 created "2016-07-22" @default.
- W2474091871 creator A5002230464 @default.
- W2474091871 creator A5007361240 @default.
- W2474091871 date "1983-03-31" @default.
- W2474091871 modified "2023-09-27" @default.
- W2474091871 title "lμm MESFET/SOS集成电路制备及液氮温度下器件的工作特性" @default.
- W2474091871 hasPublicationYear "1983" @default.
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