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• W2476768305 abstract "A large laser modulated resistance effect was observed in a Cu2O heterojunction of Cu2O/Si. Compared to the no laser illumination condition, the lateral resistance of the Cu2O film was greatly altered. More interestingly, through the spatial movement of a laser spot between two electrodes, a tunable resistance with good linearity was achieved. We attribute this surface resistance effect to the difference in carrier mobility and carrier density between the Cu2O and Si sides. The strong linear resistance change ratio of Cu2O/Si indicates that this simple PN heteroepitaxial junction structure is a potential candidate for laser-controlled resistors, sensors, and even storage devices." @default.
• W2476768305 created "2016-08-23" @default.
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• W2476768305 date "2016-07-18" @default.
• W2476768305 modified "2023-10-18" @default.
• W2476768305 title "Using laser to modulate a linear resistance change in Cu2O/Si heteroepitaxial junction" @default.
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• W2476768305 doi "https://doi.org/10.1063/1.4959549" @default.
• W2476768305 hasPublicationYear "2016" @default.
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