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- W2477108948 abstract "Epitaxial growth is intimately related to the presence of steps, islands and other forms of surface irregularity. The characterisation of atomic disorder at a surface is therefore central to our understanding of the nature and kinetics of adsorption and, ultimately, to the successful growth of semiconductor structures by molecular beam epitaxy. Surface sensitive diffraction techniques can provide important statistical information about disorder over a wide spatial region. Electron diffraction: LEED and RHEED [1,2] has been used for this but the interpretation is inevitably confused by consideration of the role of multiple scattering. X-ray diffraction, on the other hand, may be interpreted within the kinematical approximation and, with the development of intense synchrotron radiation sources, is finding increasing application in the field of surface crystallography.KeywordsEpitaxial GrowthGrazing AngleDiffuse ComponentAtomic DisorderKinematical ApproximationThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves." @default.
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- W2477108948 date "1988-01-01" @default.
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- W2477108948 title "Epitaxial Growth Studied by Surface X-Ray Diffraction" @default.
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- W2477108948 doi "https://doi.org/10.1007/978-3-642-73343-7_72" @default.
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